Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics. - Prem K. Kandaswamy; H. Machhadani; E. Bellet-Amalric; L. Nevou; Maria Tchernycheva; L. Lahourcade; Francois H. Julien; Eva Monroy (Microelectron. J., 2009)

PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire. - L. Lahourcade; Julien Renard; Prem K. Kandaswamy; Bruno Gayral; M. P. Chauvat; Prem Ruterana; Eva Monroy (Microelectron. J., 2009)

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. - Daniel Hofstetter; Esther Baumann; Fabrizio Raphael Giorgetta; Ricardo Théron; Hong Wu; William J. Schaff; Jahan Dawlaty; Paul A. George; Lester F. Eastman; Farhan Rana; Prem K. Kandaswamy; Fabien Guillot; et al. (Proc. IEEE, 2010)