Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology. - Thomas J. Jenkins; Lois T. Kehias; Primit Parikh; James Ibbetson; Umesh K. Mishra; Daniel Docter; Minh Le; Joe Pusl; Duncan Widman (IEEE J. Solid State Circuits, 1999)

AlGaN/GaN HEMTs-an overview of device operation and applications. - Umesh K. Mishra; Primit Parikh; YiFeng Wu (Proc. IEEE, 2002)

Commercialization and reliability of 600 V GaN power switches. - Toshihide Kikkawa; Tsutomu Hosoda; Ken Shono; Kenji Imanishi; Yoshimori Asai; YiFeng Wu; Likun Shen; Kurt Smith; Dixie Dunn; Saurabh Chowdhury; Peter Smith; John Gritters; et al. (IRPS, 2015)

650 Volt GaN: Highest Quality-Highest Performance Drives Market Ramp. - Primit Parikh; YiFeng Wu; Likun Shen; John Gritters; Tsutomu Hosoda; Ronald Barr; Kurt Smith; Ken Shono; J. McKay; H. Clement; Saurabh Chowdhury; S. Yea; et al. (BCICTS, 2018)

Short-Circuit Capability with GaN HEMTs : Invited. - Davide Bisi; Bill Cruse; Philip Zuk; Primit Parikh; Umesh K. Mishra; Tsutomu Hosoda; Masamichi Kamiyama; Masahito Kanamura (IRPS, 2022)