Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology. - Pushkar Praveen; Rakesh Kumar Singh (ACM Trans. Design Autom. Electr. Syst., 2023)

Low power and noise-immune 9 T compute SRAM cell design based on differential power generator and Schmitt-trigger logics with14 nm FinFET technology. - Pushkar Praveen; Rakesh Kumar Singh (Int. J. Circuit Theory Appl., 2025)