A 1-Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation. - Junjie Mu; Lu Lu 013; Ju Eon Kim; Byung-Kwon An; Vishal Sharma 004; Arya Jagath Lekshmi; Putu Andhita Dananjaya; Weng Hong Lai; Wen Siang Lew; Tony Tae-Hyoung Kim (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

A 1Mb RRAM Macro with Bipolar Forming for Improved Programming Yield and Cell-by-cell Write Verification Scheme. - Byungkwon An; Junjie Mu; Putu Andhita Dananjaya; Weng Hong Lai; Wen Siang Lew; Tony Tae-Hyoung Kim (ISCAS, 2025)