Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. - Hongwei Tang; Haima Zhang; Xinyu Chen; Yin Wang; Xinzhi Zhang 005; Puyang Cai; Wenzhong Bao (Sci. China Inf. Sci., 2019)

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout. - Chang Su; Zhongxin Liang; Zhiyuan Fu; Shaodi Xu; Kaifeng Wang; Puyang Cai; Liang Chen; Ru Huang 001; Qianqian Huang (ESSDERC, 2023)

Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM. - Yishan Wu; Puyang Cai; Zhiwei Liu; Pengpeng Ren; Zhigang Ji (IRPS, 2023)

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence. - Zuoyuan Dong; Zixuan Sun; Xin Yang; Xiaomei Li; Yongkang Xue; Chen Luo; Puyang Cai; Zirui Wang; Shuying Wang; Yewei Zhang; Chaolun Wang; Pengpeng Ren; et al. (VLSI Technology and Circuits, 2023)