Qi Wang

Orcid: 0000-0002-2821-0064

Affiliations:
  • Beijing University of Posts and Telecommunications, School of Continuing Education, China
  • Key Laboratory of Optical Communication & Lightwave Technologies, Beijing, China


According to our database1, Qi Wang authored at least 8 papers between 2006 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
A Flexible and Stretchable MXene/Waterborne Polyurethane Composite-Coated Fiber Strain Sensor for Wearable Motion and Healthcare Monitoring.
Sensors, 2024

2019
Experiment on VCSEL Composed of Special Structure DBRs in Integrated Optoelectronic Chip.
IEEE Access, 2019

2009
Growth of B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As, B<sub>x</sub>Al<sub>1-</sub><sub>x</sub>As and B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub><sub>-</sub><sub>y</sub>In<sub>y</sub>As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition.
Microelectron. J., 2009

2008
LP-MOCVD growth of ternary B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH<sub>3</sub>.
Microelectron. J., 2008

2007
Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD.
Microelectron. J., 2007

Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD.
Microelectron. J., 2007

Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition.
Microelectron. J., 2007

2006
Heteroepitaxy of In<sub>0.53</sub>Ga<sub>0.47</sub>As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications.
Microelectron. J., 2006


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