Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles. - Qiaozhen Zhou; Fang Wang; Xuanyu Zhao; Kai Hu; Yujian Zhang; Xin Shan; Xin Lin; Yupeng Zhang; Ke Shan; Kailiang Zhang (J. Intell. Fuzzy Syst., 2023)