Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. - Lars Knoll; Qing-Tai Zhao; Stefan Trellenkamp; Anna Schäfer; K. K. Bourdelle; Siegfried Mantl (ESSDERC, 2012)

Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. - Simon Richter; Svetlana A. Vitusevich; Sergii Pud; Jing Li; Lars Knoll; Stefan Trellenkamp; Anna Schäfer; Steffi Lenk; Qing-Tai Zhao; Andreas Offenhäusser; Siegfried Mantl; Konstantin K. Bourdelle (ESSDERC, 2013)

Experimental demonstration of improved analog device performance in GAA-NW-TFETs. - Christian Schulte-Braucks; Simon Richter; Lars Knoll; Luca Selmi; Qing-Tai Zhao; Siegfried Mantl (ESSDERC, 2014)

Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. - Fabian Horst; Michael Graef; Fabian Hosenfeld; Atieh Farokhnejad; Franziska Hain; Gia Vinh Luong; Qing-Tai Zhao; Benjamín Iñíguez; Alexander Kloes (ESSDERC, 2016)

Si n-TFETs on ultra thin body with suppressed ambipolarity. - Chang Liu; Qinghua Han; Gia Vinh Luong; Keyvan Narimani; Stefan Glass; Andreas T. Tiedemann; Stefan Trellenkamp; Wenjie Yu; Xi Wang; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2016)

Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor. - Qinghua Han; Anran Gao; Keyvan Narimani; Yuelin Wang; Tie Li; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. - Gia Vinh Luong; Sebastiano Strangio; Andreas T. Tiedemann; Patric Bernardy; Stefan Trellenkamp; Pierpaolo Palestri; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)

4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. - Fengben Xi; Yi Han; Andreas T. Tiedemann; Detlev Grützmacher; Qing-Tai Zhao (ESSDERC, 2021)

NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. - Melvin Galicia; Stephan Menzel; Farhad Merchant; Maximilian Müller; Hsin-Yu Chen; Qing-Tai Zhao; Felix Cüppers; Abdur R. Jalil; Qi Shu; Peter Schüffelgen; Gregor Mussler; Carsten Funck; et al. (DATE, 2022)

Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing. - Fengben Xi; Andreas Grenmy; Jiayuan Zhang; Yi Han; Jin Hee Bae; Detlev Grützmacher; Qing-Tai Zhao (ESSCIRC, 2022)

GeSn Vertical Gate-all-around Nanowire n-type MOSFETs. - Yannik Junk; Marvin Frauenrath; Yi Han; Omar Concepción Diaz; Jin-Hee Bae; Jean-Michel Hartmann; Detlev Grützmacher; Dan Buca; Qing-Tai Zhao (ESSDERC, 2022)

Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory. - Christopher Bengel; Stefan Wiefels; Vikas Rana; Hsin-Yu Chen; Qing-Tai Zhao; Rainer Waser; Henriette Padberg; Fengben Xi; Stephan Menzel (ISCAS, 2022)

Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors. - Alexander Kloes; Mike Schwarz; Yi Han; Qing-Tai Zhao; Christian Römer (MIXDES, 2023)

High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain. - Yi Han; Jingxuan Sun; Jin Hee Bae; Detlev Grützmacher; Joachim Knoch; Qing-Tai Zhao (VLSI Technology and Circuits, 2023)