Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. - Jiejie Zhu; Bin Hou; Lixiang Chen; Qing Zhu 013; Ling Yang 003; Xiaowei Zhou; Peng Zhang; Xiaohua Ma 001; Yue Hao 001 (IRPS, 2018)

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. - Qing Zhu 013; Xiaohua Ma 001; Bin Hou; Mei Wu; Jiejie Zhu; Ling Yang 003; Meng Zhang; Yue Hao 001 (IEEE Access, 2020)

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. - Siyu Liu; Xiaohua Ma 001; Jiejie Zhu; Minhan Mi; Jingshu Guo; Jielong Liu; Yilin Chen; Qing Zhu 013; Ling Yang 003; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. - Yilin Chen; Qing Zhu 013; Jiejie Zhu; Minhan Mi; Meng Zhang; Yuwei Zhou; Ziyue Zhao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2023)

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. - Sirui An; Minhan Mi; Pengfei Wang; Sijia Liu; Qing Zhu 013; Meng Zhang; Zhihong Chen; Jielong Liu; Siyin Guo; Can Gong; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. - Qing Zhu 013; Zhenni Wang; Yuxiang Wei 006; Ling Yang 003; Xiaoli Lu; Jiejie Zhu; Peng Zhong; Yimin Lei; Xiaohua Ma 001 (Sci. China Inf. Sci., 2024)

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. - Can Gong; Minhan Mi; Yuwei Zhou; Pengfei Wang; Hanzhen Li; Xinyi Wen; Ting Meng; Sirui An; Xiang Du; Kai Cheng; Meng Zhang; Qing Zhu 013; et al. (Sci. China Inf. Sci., 2025)