High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. - Qingyuan Chang; Bin Hou; Ling Yang 003; Mei Wu; Meng Zhang; Hao Lu 012; Fuchun Jia; Xuerui Niu; Chunzhou Shi; Jiale Du; Mao Jia; Qian Yu; et al. (Sci. China Inf. Sci., 2024)

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. - Mao Jia; Bin Hou; Ling Yang 003; Meng Zhang; Mei Wu; Hao Lu 012; Xitong Hong; Zhiqiang Xue; Jiale Du; Qingyuan Chang; Qian Xiao; Xiaohua Ma 001; et al. (Sci. China Inf. Sci., 2025)