Sheet-rich Silk-base RRAM with Low Switching Voltages and Improved Reliabilities. - Mohammad T. Sharbati; Se Youn Cho; Golnaz Najaf Tomaraei; Qingzhou Wan; Joshua Schlea; Mostafa Bedewy; Feng Xiong (DRC, 2019)

Dynamic $( mathrm{Bi}_{ mathrm{x}} mathrm{Sb}_{1- mathrm{x}})_{2} mathrm{Te}_{ mathrm{3}}$ Synaptic Devices with Programmable Spatio-Temporal Responses. - Qingzhou Wan; Peng Zhang; Qiming Shao; Mohammad T. Sharbati; John R. Erickson; Kang L. Wang; Feng Xiong (DRC, 2019)

Low-Voltage Electrochemical Li x WO 3 Synapses with Temporal Dynamics for Spiking Neural Networks. - Qingzhou Wan; Marco Rasetto; Mohammad T. Sharbati; John R. Erickson; Sridhar Reddy Velagala; Matthew T. Reilly; Yiyang Li; Ryad Benosman; Feng Xiong (Adv. Intell. Syst., 2021)

The Challenges Ahead for Bio-inspired Neuromorphic Event Processors: How Memristors Dynamic Properties Could Revolutionize Machine Learning. - Marco Rasetto; Qingzhou Wan; Himanshu Akolkar; Bertram E. Shi; Feng Xiong; Ryad Benosman (CoRR, 2022)

Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor. - Marco Rasetto; Qingzhou Wan; Himanshu Akolkar; Feng Xiong; Bertram E. Shi; Ryad Benosman (IEEE J. Emerg. Sel. Topics Circuits Syst., 2023)