Determination of boron concentration in heavily doped p-type Si1-xGex/Si heterostructure by infrared ellipsometric spectroscopy. - Changchun Chen; Jiangfeng Liu; Benhai Yu; Qirun Dai 001 (Microelectron. J., 2007)

Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient. - Changchun Chen; Jiangfeng Liu; Benhai Yu; Qirun Dai 001 (Microelectron. J., 2007)