High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. - R. Arinero; En-xia Zhang; Nadia Rezzak; Ronald D. Schrimpf; Daniel M. Fleetwood; B. K. Choï; A. B. Hmelo; Julien Mekki; Antoine D. Touboul; Frédéric Saigné (Microelectron. Reliab., 2011)

Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope. - W. Hourani; B. Gautier; Liviu Militaru; D. Albertini; A. Descamps-Mandine; R. Arinero (Microelectron. Reliab., 2011)