Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology. - T. V. Dinh; S.-W. Tam; A. J. Scholten; L. Tondelli; R. M. T. Pijper; S. H. Kondapalli; J. Xie; A. Wong; I. To; R. Asanovski; L. Selmi (VLSI Technology and Circuits, 2024)

Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs. - R. Asanovski; Hiroaki Arimura; J. Ganguly; Pierpaolo Palestri; Alexander Grill; Ben Kaczer; Naoto Horiguchi; Luca Selmi; Jacopo Franco (IRPS, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)

Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETs. - L. Tondelli; A. J. Scholten; J. Van Beurden; R. M. T. Pijper; R. Asanovski; T. V. Dinh; L. Selmi (IRPS, 2025)