Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors. - J. K. Mee; R. A. B. Devine; L. Trombetta; R. J. Kaplar; P. Gouker (Microelectron. Reliab., 2011)

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. - M. P. King; Jeramy Ray Dickerson; S. DasGupta; Matthew J. Marinella; R. J. Kaplar; Daniel Piedra; Min Sun; Tomás Palacios (IRPS, 2015)

Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition. - Albert G. Baca; B. A. Klein; A. M. Armstrong; A. A. Allerman; E. A. Douglas; T. R. Fortune; R. J. Kaplar (IRPS, 2019)

Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing. - B. D. Rummel; C. E. Glaser; R. T. Gurule; M. Groves; A. T. Binder; R. Floyd; L. Yates; K. J. Reilly; R. J. Kaplar (IRPS, 2024)

Interfacial GaOx in $ text{Al}_{2} mathrm{O}_{3}/n- text{GaN}$ MOS Structures Studied by Quasi-Static CV and ToF-SIMS. - B. D. Rummel; C. E. Glaser; J. A. Ohlhausen; J. P. Klesko; M. L. Meyerson; C. Remple; R. J. Kaplar (IRPS, 2025)