Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer. - R. Kinder; A. Vincze; M. Kuruc; R. Srnánek; B. Lojek; B. Sopko; D. Chren (Microelectron. J., 2006)

Simulation of boron diffusion in Si and strained SiGe layers. - R. Kinder; F. Schwierz; P. Beno; J. Geßner (Microelectron. J., 2007)