RFCMOS technology from 0.25μm to 65nm: the state of the art. - John J. Pekarik; David R. Greenberg; Basanth Jagannathan; Robert A. Groves; J. R. Jones; Raminderpal Singh; Anil Chinthakindi; Xudong Wang; Matthew J. Breitwisch; Douglas D. Coolbaugh; Peter E. Cottrell; John E. Florkey; et al. (CICC, 2004)

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. - Uppili S. Raghunathan; Saurabh Sirohi; Vaibhav Ruparelia; Prateek Kumar Sharma; Dimitris P. Ioannou; Vibhor Jain; H. K. Kakara; S. Gedela; Venkat Vanukuru; P. Dongmo; C. Luce; R. Hazbun; et al. (BCICTS, 2022)

Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability. - M. Hauser; P. Srinivasan 002; A. Vallett; R. Krishnasamy; Fernando Guarin; Dave Brochu; V. Pham; Byoung Min (IRPS, 2022)