Photomodulation spectroscopy applied to low-dimensional semiconductor structures. - J. Misiewicz; Grzegorz Sek; R. Kudrawiec; K. Ryczko; D. Gollub; Johann Peter Reithmaier; Alfred Forchel (Microelectron. J., 2003)

Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells. - J. Misiewicz; P. Sitarek; K. Ryczko; R. Kudrawiec; M. Fischer; M. Reinhardt; Alfred Forchel (Microelectron. J., 2003)

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells. - J. Misiewicz; R. Kudrawiec; M. Motyka; J. Andrzejewski; D. Gollub; Alfred Forchel (Microelectron. J., 2005)

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. - J. Misiewicz; R. Kudrawiec; Marcin Syperek; R. Paszkiewicz; B. Paszkiewicz; M. Tlaczala (Microelectron. J., 2005)

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells. - R. Kudrawiec; M. Gladysiewicz; J. Misiewicz; G. Cywinski; Marcin Siekacz; Czeslaw Skierbiszewski (Microelectron. J., 2009)

Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions. - R. Kudrawiec; M. Gladysiewicz; M. Motyka; J. Misiewicz; G. Cywinski; Marcin Siekacz; Czeslaw Skierbiszewski (Microelectron. J., 2009)

Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. - R. Kudrawiec; M. Motyka; J. Misiewicz; B. Paszkiewicz; R. Paszkiewicz; M. Tlaczala (Microelectron. J., 2009)