2.5 Gbits/sec telecommunications gate array. - N. Hendrickson; R. Langer; T. Coe; M. Vana; I. Deyhimy (ICCD, 1990)

Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields. - Augusto Tazzoli; Gaudenzio Meneghesso; Franco Zanon; Francesca Danesin; Enrico Zanoni; Philippe Bove; R. Langer; J. Thorpe (Microelectron. Reliab., 2008)

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. - Abhitosh Vais; Sachin Yadav 001; Yves Mols; Bjorn Vermeersch; Komal Vondkar Kodandarama; Marina Baryshnikova; G. Mannaert; R. Alcotte; Geert Boccardi; Piet Wambacq; Bertrand Parvais; R. Langer; et al. (ESSDERC, 2022)

Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts. - Steven Demuynck; Victor Vega-Gonzalez; C. Toledo de Carvalho Cavalcante; L. Petersen Barbosa Lima; K. Stiers; C. Sheng; A. Vandooren; M. Hosseini; X. Zhou; Hans Mertens; Thomas Chiarella; Jürgen Bömmels; et al. (VLSI Technology and Circuits, 2024)