The effects of extended depletion region on noise modeling of HEMT's. - Meena Mishra; R. Muralidharan; Harsh; S. S. Islam; Mukunda B. Das (IEICE Electron. Express, 2005)

Hall-effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range. - Sagnik Kumar; R. Muralidharan; G. Narayanan (IET Circuits Devices Syst., 2021)

Comparison of GaN and GaAs based Hall Magnetic Sensor for Power Applications. - Anuj Kumar; R. Muralidharan; G. Narayanan (iSES, 2022)