Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications. - X. D. Huang; R. P. Shi; C. H. Leung; Pui-To Lai (Microelectron. Reliab., 2014)

Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. - R. P. Shi; X. D. Huang; Johnny K. O. Sin; Pui-To Lai (Microelectron. Reliab., 2016)