A New Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications. - Radhakrishnan Sithanandam; Mamidala Jagadesh Kumar (VLSI Design, 2010)

Analytical Modeling of Sub-onset Current of Tunnel Field Effect Transistor. - Parmanand Singh; Vivek Asthana; Radhakrishnan Sithanandam; Anand Bulusu; Sudeb Dasgupta (VLSID, 2014)

Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics. - N. K. Kranthi; Radhakrishnan Sithanandam; Rama Komaragiri (VLSID, 2015)

Technology Scaling of ESD Devices in State of the Art FinFET Technologies. - Sukjin Kim; Radhakrishnan Sithanandam; Woojin Seo; Mijin Lee; Sangyoung Cho; Juho Park; Hyukhoon Kwon; Namho Kim; Chanhee Jeon (CICC, 2020)