Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. - Konrad Seidel; Kati Biedermann; Jan Van Houdt; Tarek Ali; Raik Hoffmann; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Philipp Steinke; K. Zimmermann (NVMTS, 2019)

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. - Tarek Ali; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Ricardo Olivo; David Lehninger; Konstantin Mertens; Franz Müller 001; Maximilian Lederer; Raik Hoffmann; Clemens Mart; et al. (IRPS, 2020)

BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms. - Betting Wehring; Raik Hoffmann; Lukas Gerlich; Malte Czernohorsky; Benjamin Uhlig; Robert Seidel; Tobias Barchewitz; Frank Schlaphof; Lutz Meinshausen; Christoph Leyens (IRPS, 2020)

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. - Yannick Raffel; Sunanda Thunder; Maximilian Lederer; Ricardo Olivo; Raik Hoffmann; Luca Pirro; Sven Beyer; Talha Chohan; Po-Tsang Huang; Sourav De 002; Thomas Kämpfe; Konrad Seidel; et al. (ICICDT, 2022)

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. - Tarek Ali; Ricardo Olivo; S. Kerdilès; David Lehninger; Maximilian Lederer; Sourav De 002; A.-S. Royet; Ayse Sünbül; A. Prabhu; Kati Kühnel; Malte Czernohorsky; M. Rudolph; et al. (IMW, 2022)

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. - David Lehninger; Hannes Mähne; Tarek Ali; Raik Hoffmann; Ricardo Olivo; Maximilian Lederer; Konstantin Mertens; Thomas Kämpfe; Kati Biedermann; Matthias Landwehr; Andreas Heinig; Defu Wang; et al. (IMW, 2022)

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. - Yannick Raffel; Ricardo Olivo; Maximilian Lederer; Franz Müller 001; Raik Hoffmann; Tarek Ali; Konstantin Mertens; Luca Pirro; Maximilian Drescher; Sven Beyer; Thomas Kämpfe; Konrad Seidel; et al. (IMW, 2022)

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. - Ayse Sünbül; Tarek Ali; Raik Hoffmann; Ricardo Revello; Yannick Raffel; Pardeep Duhan; David Lehninger; Kati Kühnel; Matthias Rudolph; Sebastian Oehler; Philipp Schramm; Malte Czernohorsky; et al. (IRPS, 2022)

Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies. - Alison Erlene Viegas; Konstantinos Efstathios Falidas; Tarek Nadi Ismail Ali; Kati Kühnel; Raik Hoffmann; Clemens Mart; Malte Czernohorsky; Johannes Heitmann (IRPS, 2022)

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. - Konrad Seidel; David Lehninger; Raik Hoffmann; Tarek Ali; Maximilian Lederer; Ricardo Revello; Konstantin Mertens; Kati Biedermann; Yukai Shen; Defu Wang; Matthias Landwehr; Andreas Heinig; et al. (VLSI Technology and Circuits, 2022)

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. - Franz Müller 001; Sourav De 002; Maximilian Lederer; Raik Hoffmann; Ricardo Olivo; Thomas Kämpfe; Konrad Seidel; Tarek Ali; Halid Mulaosmanovic; Stefan Dünkel; Johannes Müller; Sven Beyer; et al. (IMW, 2023)

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? - Konrad Seidel; David Lehninger; Franz Müller 001; Yannick Raffel; Ayse Sünbül; Ricardo Revello; Raik Hoffmann; Sourav De 002; Thomas Kämpfe; Maximilian Lederer (IMW, 2023)

Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. - Maximilian Lederer; Franz Müller 001; Raik Hoffmann; Ricardo Olivo; Yannick Raffel; Shouzhuo Yang; Sourav De 002; Roman Potjan; Oliver Ostien; Abdelrahman Altawil; Ayse Sünbül; David Lehninger; et al. (IMW, 2024)

Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. - Ayse Sünbül; David Lehninger; Raik Hoffmann; Hannes Mähne; Kerstin Bernert; Steffen Thiem; Thomas Kämpfe; Konrad Siedel; Maximilian Lederer; Lukas M. Eng (IRPS, 2024)

Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors. - Shouzhuo Yang; Yannick Raffel; Ricardo Olivo; Franz Müller 001; Raik Hoffmann; David Lehninger; Oliver Ostien; Maik Simon; Konrad Seidel; Thomas Kämpfe; Maximilian Lederer; Gerald Gerlach (NVMTS, 2024)

Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. - Athira Sunil; Masud Rana SK; Maximilian Lederer; Yannick Raffel; Franz Müller 001; Ricardo Olivo; Raik Hoffmann; Konrad Seidel; Thomas Kämpfe; Bhaswar Chakrabarti; Sourav De 002 (Adv. Intell. Syst., 2024)

Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic Temperatures. - Shouzhuo Yang; Yannick Raffel; Ricardo Olivo; Raik Hoffmann; David Lehninger; Oliver Ostien; Maik Simon; Konrad Seidel; Thomas Kämpfe; Maximilian Lederer; Gerald Gerlach (IRPS, 2025)

Engineering-Oriented Design of Drift-Resilient MTJ Random Number Generator via Hybrid Control Strategies. - Ran Zhang; Caihua Wan; Yingqian Xu; Xiaohan Li; Raik Hoffmann; Meike Hindenberg; Shiqiang Liu; Dehao Kong; Shilong Xiong; Shikun He; Alptekin Vardar; Qiang Dai; et al. (CoRR, 2025)