Simulation of surface effects in planar GaAs MESFET structures by use of a quasi-2D model. - Wolfgang Brockerhoff; Michael Versteegen; Ralf Bertenburg; Ulrich Seiler; Klaus Heime (Eur. Trans. Telecommun., 1990)

27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier. - Stefan van Waasen; Andreas Umbach; Uwe Auer; Heinz-Gunter Bach; Ralf Michael Bertenburg; Guido Janssen; Gebre Giorgis Mekonnen; Wolfgang Passenberg; Ralf Reuter; Wolfgang Schlaak; Carsten Schramm; Günter Unterbörsch; et al. (IEEE J. Solid State Circuits, 1997)

InP-based logic gates for low power monolithic optoelectronic circuits [InGaAs/InAlAs/InP]. - Andreas Brennemann; E. Bushehri; W. Daumann; M. Agethen; R. M. Bertenburg; Wolfgang Brockerhoff; V. Staroselsky; Vladimir Bratov; Thomas Schlichter; Franz-Josef Tegude (ICECS, 1998)