300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures. - Haiwen Xu; Rami Khazaka; Jishen Zhang; Zijie Zheng; Yue Chen; Xiao Gong (VLSI Technology and Circuits, 2022)

Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature. - Gerui Zheng; Yuxuan Wang; Haiwen Xu; Rami Khazaka; Lutz Muehlenbein; Sheng Luo; Xuanqi Chen; Rui Shao; Zijie Zheng; Gengchiau Liang; Xiao Gong (VLSI Technology and Circuits, 2023)

First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV Semiconductor. - Gerui Zheng; Enze Zhang; Rami Khazaka; Kaizhen Han; Haiwen Xu; Yuxuan Wang; Hyunsoo Yang; Xiao Gong (VLSI Technology and Circuits, 2024)