Two-dimensional models for quantum effects on short channel electrostatics of lightly doped symmetric double-gate MOSFETs. - Rana Y. El Kashlan; Hamdy Abd Elhamid; Yehea I. Ismail (IET Circuits Devices Syst., 2018)

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. - Rana Y. El Kashlan; Hao Yu; Ahmad Khaled; Sachin Yadav 001; Uthayasankaran Peralagu; AliReza Alian; Nadine Collaert; Piet Wambacq; Bertrand Parvais (ESSDERC, 2023)