A half-micron CMOS logic generation. - Charles W. Koburger III; William F. Clark; James W. Adkisson; Eric Adler; Paul E. Bakeman; Albert S. Bergendahl; Alan B. Botula; W. Chang; Bijan Davari; John H. Givens; Howard H. Hansen; Steven J. Holmes; et al. (IBM J. Res. Dev., 1995)

Silicides and local interconnections for high-performance VLSI applications. - Randy W. Mann; Larry A. Clevenger; Paul D. Agnello; Francis R. White (IBM J. Res. Dev., 1995)

Enchanced multi-threshold (MTCMOS) circuits using variable well bias. - Stephen V. Kosonocky; Michael Immediato; Peter E. Cottrell; Terence B. Hook; Randy W. Mann; Jeff Brown (ISLPED, 2001)

Ultralow-power SRAM technology. - Randy W. Mann; W. W. (Bill) Abadeer; Matthew J. Breitwisch; O. Bula; Jeff S. Brown; Bryant C. Colwill; Peter E. Cottrell; William T. Crocco Jr.; Stephen S. Furkay; Michael J. Hauser; Terence B. Hook; Dennis Hoyniak; et al. (IBM J. Res. Dev., 2003)

Sub-threshold Circuit Design with Shrinking CMOS Devices. - Benton H. Calhoun; Sudhanshu Khanna; Randy W. Mann; Jiajing Wang (ISCAS, 2009)

Improving SRAM Vmin and yield by using variation-aware BTI stress. - Jiajing Wang; Satyanand Nalam; Zhenyu Qi 001; Randy W. Mann; Mircea R. Stan; Benton H. Calhoun (CICC, 2010)

Limits of bias based assist methods in nano-scale 6T SRAM. - Randy W. Mann; Satyanand Nalam; Jiajing Wang; Benton H. Calhoun (ISQED, 2010)

New category of ultra-thin notchless 6T SRAM cell layout topologies for sub-22nm. - Randy W. Mann; Benton H. Calhoun (ISQED, 2011)

Nonrandom Device Mismatch Considerations in Nanoscale SRAM. - Randy W. Mann; Terry B. Hook; Phung T. Nguyen; Benton H. Calhoun (IEEE Trans. Very Large Scale Integr. Syst., 2012)

Tracking On-Chip Age Using Distributed, Embedded Sensors. - Stuart N. Wooters; Adam C. Cabe; Zhenyu Qi 001; Jiajing Wang; Randy W. Mann; Benton H. Calhoun; Mircea R. Stan; Travis N. Blalock (IEEE Trans. Very Large Scale Integr. Syst., 2012)

HTOL SRAM Vmin shift considerations in scaled HKMG technologies. - S. Balasubramanian; Vivek Joshi; Torsten Klick; Randy W. Mann; Joseph Versaggi; Akhilesh Gautam; C. Weintraub; G. Kurz; G. Krause; Andreas Kerber; Biju Parameshwaran; Tanya Nigam (CICC, 2014)

Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing. - Yoann Mamy Randriamihaja; William McMahon; S. Balasubramanian; Tanya Nigam; Biju Parameshwaran; Randy W. Mann; Torsten Klick; T. Schaefer; A. Kumar; Y. Song; Vivek Joshi; Rakesh Ranjan; et al. (IRPS, 2015)

Soft errors: Reliability challenges in energy-constrained ULP body sensor networks applications. - Harsh N. Patel; Benton H. Calhoun; Randy W. Mann (IOLTS, 2017)

Bias-Induced Healing of $V_{ text {min}}$ Failures in Advanced SRAM Arrays. - Randy W. Mann; William McMahon; Yoann Mamy Randriamihaja; Yuncheng Song; Ajay Anand Kallianpur; Sheng Xie; Akhilesh Gautam; Joseph Versaggi; Biju Parameshwaran; Chad E. Weintraub (IEEE Trans. Very Large Scale Integr. Syst., 2017)

Array Termination Impacts in Advanced SRAM. - Randy W. Mann; Sandeep Puri; Sheng Xie; Daniel Marienfeld; Joseph Versaggi; Bianzhu Fu; Michael Gribelyuk; Ratheesh R. Thankalekshmi; Xiaoqiang Zhang; Hui Zang; Chad E. Weintraub (IEEE Trans. Very Large Scale Integr. Syst., 2017)

A Retrospective View on the Technology Evolution to Support Low Power Mobile Application. - Bipul C. Paul; Ajey P. Jacob; William Taylor; Randy W. Mann; Joseph Versaggi; Edward J. Nowak; Lars W. Liebmann (J. Low Power Electron., 2018)

An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Sanjay Parihar; Qun Gao; Ankur Arya; Carl Radens; Shesh Mani Pandey; Joseph Versaggi; Jack M. Higman; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Bias-Dependent Variation in FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Oh Sung Kwon; Xi Cao; Sanjay Parihar; Muhammed Ahosan Ul Karim; Jack M. Higman; Joseph Versaggi; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2020)