Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs. - Ray-Ming Lin; Yung-Hsiang Lin; Chung-Hao Chiang; Mu-Jen Lai; Yi-Lun Chou; Yuan-Chieh Lu; Shou-Yi Kuo; Bor-Ren Fang; Meng-Chyi Wu (Microelectron. Reliab., 2010)

Modulation and Refinement of In-N re-Bonding of InGaN Through in Post-Flow During a Refined Temper Fire Treatment Process. - Tsung-Yen Liu; Lung-Chien Chen; Cheng-Che Lee; Yu Cheng; Chieh-Hsiung Kuan; Ray-Ming Lin (IEEE Access, 2020)

Study of Metal-Semiconductor-Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method. - Lung-Chien Chen; Kuan-Lin Lee; Kun-Yi Lee; Yi-Wen Huang; Ray-Ming Lin (Sensors, 2020)

Epoxy Molding Compound Lead Frames With Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes. - Tsung-Yen Liu; Shih-Ming Huang; Mu-Jen Lai; Rui-Sen Liu; Yi-Tsung Chang; Wen-Hong Sun; Ray-Ming Lin (IEEE Access, 2021)