Active strain modulation in field effect devices. - Tom van Hemert; Raymond J. E. Hueting (ESSDERC, 2012)

Role of junction depth in light emission from silicon p-i-n leds. - Giulia Piccolo; Amir Sammak; Raymond J. E. Hueting; Jurriaan Schmitz; Lis K. Nanver (ESSDERC, 2013)

Identifying failure mechanisms in LDMOS transistors by analytical stability analysis. - Alessandro Ferrara; Peter G. Steeneken; Boni K. Boksteen; Anco Heringa; Andries J. Scholten; Jurriaan Schmitz; Raymond J. E. Hueting (ESSDERC, 2014)

Silicon LEDs in FinFET technology. - Giulia Piccolo; Piet I. Kuindersma; Lars-Åke Ragnarsson; Raymond J. E. Hueting; Nadine Collaert; Jurriaan Schmitz (ESSDERC, 2014)

Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs. - Vishal Agarwal; Anne-Johan Annema; Satadal Dutta; Raymond J. E. Hueting; Lis K. Nanver; Bram Nauta (ESSDERC, 2016)

Impact of the collector structure on the performance of the insulated gate bipolar transistor. - Jeroen van Zoeren; Gaurav Gupta; Boni K. Boksteen; Lis K. Nanver; Raymond J. E. Hueting (Microelectron. J., 2025)