Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory. - Marina Yamaguchi; Shosuke Fujii; Yuuichi Kamimuta; Shoichi Kabuyanagi; Tsunehiro Ino; Yasushi Nakasaki; Riichiro Takaishi; Reika Ichihara; Masumi Saitoh (IRPS, 2018)

Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication. - Shosuke Fujii; Reika Ichihara; Takuya Konno; Marina Yamaguchi; Harumi Seki; Hiroki Tanaka; Dandan Zhao; Yoko Yoshimura; Masumi Saitoh; Masato Koyama (VLSI Circuits, 2019)

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. - Takamasa Hamai; Kunifumi Suzuki; Reika Ichihara; Yusuke Higashi; Yoko Yoshimura; Kiwamu Sakuma; Kensuke Ota; Kota Takahashi; Kazuhiro Matsuo; Shosuke Fujii; Masumi Saitoh (IRPS, 2023)

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. - Harumi Seki; Reika Ichihara; Yusuke Higashi; Yasushi Nakasaki; Masumi Saitoh; Masamichi Suzuki (IRPS, 2023)

Overcome the End of Life of 3D Flash Memory by Recovery Annealing, Aiming for Carbon Neutrality in Semiconductor Manufacturing. - Hitomi Tanaka; Hajime Sano; Reika Ichihara; Yuta Aiba; Kazuma Hasegawa; Kana Kudo; Chieko Tokunaga; Yasuhito Yoshimizu; Fumie Kikushima; Tomoya Sanuki (IMW, 2024)

Cycling Induced Imprint Phenomenon at Intermediate State used for Multi-Level Operation in HfO2-FeFET. - Viktoria Schlykow; Kunifumi Suzuki; Yoko Yoshimura; Hidesato Ishida; Kiwamu Sakuma; Kazuhiro Matsuo; Masumi Saitoh; Reika Ichihara (IRPS, 2025)