A statistical simulation method for reliability analysis of SRAM core-cells. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (DAC, 2010)

Impact of Resistive-Bridging Defects in SRAM Core-Cell. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (DELTA, 2010)

Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (ETS, 2010)

Setting test conditions for improving SRAM reliability. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (ETS, 2010)

Detecting NBTI induced failures in SRAM core-cells. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (VTS, 2010)

On using address scrambling to implement defect tolerance in SRAMs. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (ITC, 2011)

Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes. - Renan Alves Fonseca; Luigi Dilillo; Alberto Bosio; Patrick Girard 001; Serge Pravossoudovitch; Arnaud Virazel; Nabil Badereddine (J. Electron. Test., 2012)