Source electrode evolution of a low voltage power MOSFET under avalanche cycling. - B. Bernoux; René Escoffier; P. Jalbaud; Jean-Marie Dorkel (Microelectron. Reliab., 2009)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. - William Vandendaele; Xavier Garros; Thomas Lorin; Erwan Morvan; A. Torres; René Escoffier; Marie-Anne Jaud; Marc Plissonnier; Fred Gaillard (IRPS, 2018)

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. - Camille Leurquin; William Vandendaele; Aby-Gaël Viey; Romain Gwoziecki; René Escoffier; R. Salot; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2022)