Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process. - Rengie Mark D. Mailig; Shun'ichiro Ohmi (IEICE Trans. Electron., 2019)

Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process. - Shun'ichiro Ohmi; Yuya Tsukamoto; Rengie Mark D. Mailig (IEICE Trans. Electron., 2019)

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. - Shun'ichiro Ohmi; Min Gee Kim; Masakazu Kataoka; Masaki Hayashi; Rengie Mark D. Mailig (DRC, 2020)

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes. - Min Gee Kim; Masakazu Kataoka; Rengie Mark D. Mailig; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)

The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process. - Rengie Mark D. Mailig; Min Gee Kim; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)