An Ultra-Low Specific On-Resistance LDMOS With Segmented LOCOS In 0.18 μm BCD Process Platform. - Jun Huang; Ning Ning 002; Renxiong Li; Qi Ding; Yutuo Guo; Yu Wang; Kunqin He; Yaxin Liu; Lulu Peng (ASICON, 2023)

Development of a 65V low Ron,sp N-type LDMOS on 180 nm BCD platform. - Qi Ding; Ning Ning 002; Jun Huang; Renxiong Li; Yu Wang; Yutuo Guo; Kunqin He; Yaxin Liu; Ziyi Zeng; Huaishan Wang; Juan Tang; Qiuyue Huo; et al. (Microelectron. J., 2025)