Scalability and logic functionalities of TA-MRAMs. - Ioan Lucian Prejbeanu; Ricardo C. Sousa; Bernard Dieny; Jean-Pierre Nozieres; S. Bandiera; Jérémy Alvarez-Herault; Q. Stainer; L. Lombard; Clarisse Ducruet; Y. Conraux; Ken Mackay (NEWCAS, 2013)

Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise. - S. Amara-Dababi; Ricardo C. Sousa; H. Béa; Claire Baraduc; Ken Mackay; Bernard Dieny (Microelectron. Reliab., 2013)

Magnetic memories: From DRAM replacement to ultra low power logic chips. - Guillaume Prenat; Gregory di Pendina; Christophe Layer; Olivier Goncalves; K. Jaber; Bernard Dieny; Ricardo C. Sousa; Ioan Lucian Prejbeanu; Jean-Pierre Nozieres (DATE, 2014)

Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices. - N. Perrissin; Steven Lequeux; N. Strelkov; Laurent Vila; Liliana Buda-Prejbeanu; S. Auffret; Ricardo C. Sousa; Ioan Lucian Prejbeanu; Bernard Dieny (ICICDT, 2018)

PSA-STT-MRAM solution for extended temperature stability. - Steven Lequeux; Trevor Almeida; Nuno Caçoilo; Alvaro Palomino; Ioan Lucian Prejbeanu; Ricardo C. Sousa; David Cooper; Bernard Dieny (IMW, 2021)

A Magnetic Sensor Based on a Nanometric Spin Transfer Torque Magnetic Tunnel Junction Suitable for Monolithic Integration. - Hugo Nicolas; Joris Pascal; Luc Hébrard; Jean-Baptiste Kammerer; Ricardo C. Sousa; Ariam Mora-Hernández; Ioan Lucian Prejbeanu (IEEE SENSORS, 2022)