Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. - Ayse Sünbül; Tarek Ali; Raik Hoffmann; Ricardo Revello; Yannick Raffel; Pardeep Duhan; David Lehninger; Kati Kühnel; Matthias Rudolph; Sebastian Oehler; Philipp Schramm; Malte Czernohorsky; et al. (IRPS, 2022)

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. - Konrad Seidel; David Lehninger; Raik Hoffmann; Tarek Ali; Maximilian Lederer; Ricardo Revello; Konstantin Mertens; Kati Biedermann; Yukai Shen; Defu Wang; Matthias Landwehr; Andreas Heinig; et al. (VLSI Technology and Circuits, 2022)

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? - Konrad Seidel; David Lehninger; Franz Müller 001; Yannick Raffel; Ayse Sünbül; Ricardo Revello; Raik Hoffmann; Sourav De 002; Thomas Kämpfe; Maximilian Lederer (IMW, 2023)