NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. - P. Srinivasan; J. Fronheiser; S. Siddiqui; A. Kerber; L. F. Edge; Richard G. Southwick; Eduard Cartier (IRPS, 2015)

Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS. - ChoongHyun Lee; Richard G. Southwick; Shogo Mochizuki; Paul Jamison; Ruqiang Bao; Rajan Kumar Pandey; Aniruddha Konar; Takashi Ando; Vijay Narayanan; Bala Haran; Hemanth Jagannathan (ASICON, 2017)

Hot carrier reliability in ultra-scaled sige channel p-FinFETs. - Miaomiao Wang 006; Xin Miao; James H. Stathis; Richard G. Southwick (ASICON, 2017)

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. - Miaomiao Wang 006; Richard G. Southwick; Kangguo Cheng; James H. Stathis (IRPS, 2018)

Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch. - H. Huang; P. S. McLaughin; James J. Kelly; C.-C. Yang; Richard G. Southwick; M. Wang; Griselda Bonilla; Gauri Karve (IRPS, 2019)

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. - Narendra Parihar; Uma Sharma; Richard G. Southwick; Miaomiao Wang 006; James H. Stathis; Souvik Mahapatra (IRPS, 2019)

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. - Nilotpal Choudhury; Uma Sharma; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2020)

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. - Huimei Zhou; Miaomiao Wang 006; Jingyun Zhang; Koji Watanabe; Curtis Durfee; Shogo Mochizuki; Ruqiang Bao; Richard G. Southwick; Maruf Bhuiyan; Basker Veeraraghavan (IRPS, 2020)

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. - Nilotpal Choudhury; Tarun Samadder; Ravi Tiwari; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2021)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)

A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics. - Ernest Y. Wu; Richard G. Southwick; Baozhen Li (IRPS, 2025)