Reliability Investigation of Gallium Nitride HEMT. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; V. Hoel; Sylvain L. Delage; N. Chaturvedi; Richard Lossy; Joachim Würfl (Microelectron. Reliab., 2004)

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. - Arkadiusz Glowacki; Piotr Laskowski; Christian Boit; Ponky Ivo; Eldad Bahat-Treidel; Reza Pazirandeh; Richard Lossy; Joachim Würfl; Günther Tränkle (Microelectron. Reliab., 2009)

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. - Ponky Ivo; Arkadiusz Glowacki; Eldad Bahat-Treidel; Richard Lossy; Joachim Würfl; Christian Boit; Günther Tränkle (Microelectron. Reliab., 2011)

Reliability issues of GaN based high voltage power devices. - Joachim Würfl; Eldad Bahat-Treidel; Frank Brunner; E. Cho; Oliver Hilt; Ponky Ivo; A. Knauer; Paul Kurpas; Richard Lossy; Matthias Schulz; S. Singwald; Markus Weyers; et al. (Microelectron. Reliab., 2011)

Reliability studies on GaN HEMTs with sputtered Iridium gate module. - Richard Lossy; Hervé Blanck; Joachim Würfl (Microelectron. Reliab., 2012)

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. - Ponky Ivo; Eunjung Melanie Cho; Przemyslaw Kotara; Lars Schellhase; Richard Lossy; Ute Zeimer; Anna Mogilatenko; Joachim Würfl; Günther Tränkle; Arkadiusz Glowacki; Christian Boit (Microelectron. Reliab., 2014)

Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. - Nidhi Chaturvedi; Richard Lossy; Kuldip Singh; Dheeraj K. Kharbanda; Shivanshu Mishra; Ashok Chauhan; Kaushal Kishore; Pramod K. Khanna; Joachim Würfl (IEEE SENSORS, 2018)