Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges. - D. H. Triyoso; Rick Carter; J. Kluth; K. Hempel; M. Gribelyuk; L. Kang; A. Kumar; Bob Mulfinger; P. Javorka; K. Punchihewa; A. Child; T. McArdle; et al. (ICICDT, 2016)

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. - D. H. Triyoso; G. R. Mulfinger; K. Hempel; H. Tao; F. Koehler; L. Kang; A. Kumar; T. McArdle; J. Holt; A. L. Child; S. Straub; F. Ludwig; et al. (ICICDT, 2017)

An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Sanjay Parihar; Qun Gao; Ankur Arya; Carl Radens; Shesh Mani Pandey; Joseph Versaggi; Jack M. Higman; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Bias-Dependent Variation in FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Oh Sung Kwon; Xi Cao; Sanjay Parihar; Muhammed Ahosan Ul Karim; Jack M. Higman; Joseph Versaggi; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2020)

A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement. - Nishtha S. Gaul; Akhilesh Jaiswal 002; Hongsik Yoon; Taeyoung Lee; Kazutaka Yamane; Joseph Versaggi; Rick Carter; Bipul C. Paul (IMW, 2022)

Monolithically Integrated High-Performance Ge-on-Si PIN Photodetectors with Nearly 60 GHz EO Bandwidth, 0.95 A/W Responsivity, <30 nA Dark Current and -36 dB Optical Return Loss Enabled by Ge Shape Optimization. - Yusheng Bian; Abdelsalam Aboketaf; Won Suk Lee; Sujith Chandran; Edgar Huante-Ceron; Arman Najafi; Ana Villafranca; Hatef Shiran; Judson Holt; Francis Afzal; Kevin K. Dezfulian; Michelle Zhang; et al. (OFC, 2025)

High-power, low-loss, fabrication tolerant multi-tip SiN edge coupler in 300mm monolithic SiPh foundry technology. - Yusheng Bian; Takako Hirokawa; Yarong Lin; Zahidur Chowdhury; Arpan Dasgupta; Abdelsalam Aboketaf; Won Suk Lee; Francis Afzal; Sujith Chandran; Kevin K. Dezfulian; Arman Najafi; Ming Gong; et al. (OFC, 2025)