A 4-Mb low-temperature DRAM. - Walter H. Henkels; Duen-Shun Wen; Rick L. Mohler; Robert L. Franch; Thomas J. Bucelot; Christopher W. Long; John A. Bracchitta; W. J. Cote; Gary B. Bronner; Yuan Taur; Robert H. Dennard (IEEE J. Solid State Circuits, 1991)

Stress-induced dislocations in silicon integrated circuits. - Paul M. Fahey; Siegfried R. Mader; Scott R. Stiffler; Rick L. Mohler; J. Daniel Mis; James A. Slinkman (IBM J. Res. Dev., 1992)