TCAD degradation modeling for LDMOS transistors. - Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Stefano Poli; Ming-Yeh Chuang; Weidong Tian; Rick Wise (ESSDERC, 2012)

Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). - Susanna Reggiani; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Marie Denison (ESSDERC, 2013)

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. - Federico Monti; Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Ming-Yeh Chuang; Weidong Tian; Dhanoop Varghese; Rick Wise (ESSDERC, 2014)