Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. - Yusuke Higashi; Riichiro Takaishi; Koichi Kato; Masamichi Suzuki; Yasushi Nakasaki; Mitsuhiro Tomita; Yuichiro Mitani; Masuaki Matsumoto; Shohei Ogura; Katsuyuki Fukutani; Kikuo Yamabe (Microelectron. Reliab., 2017)

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory. - Marina Yamaguchi; Shosuke Fujii; Yuuichi Kamimuta; Shoichi Kabuyanagi; Tsunehiro Ino; Yasushi Nakasaki; Riichiro Takaishi; Reika Ichihara; Masumi Saitoh (IRPS, 2018)