Reliability issues of GaN based high voltage power devices. - Joachim Würfl; Eldad Bahat-Treidel; Frank Brunner; E. Cho; Oliver Hilt; Ponky Ivo; A. Knauer; Paul Kurpas; Richard Lossy; Matthias Schulz; S. Singwald; Markus Weyers; et al. (Microelectron. Reliab., 2011)

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Rimma Zhytnytska; Sergey Bychikhin; Mattia Capriotti; Oliver Hilt; Domenica Visalli; Gaudenzio Meneghesso; Enrico Zanoni; Joachim Würfl; Joff Derluyn; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2013)