A 23-ns 256 K EPROM with double-layer metal and address transition detection. - David Hoff; Saroj Pathak; James Payne; Ritu Shrivastava; Jose I. Arreola; Christopher Norris; Shou-chang Tsao; Bruce L. Prickett; Matthew Orput (IEEE J. Solid State Circuits, 1989)

A Framework for Validation of Object Oriented Design Metrics - Devpriya Soni; Ritu Shrivastava; M. Kumar 001 (CoRR, 2010)

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. - Yan Li; Seungpil Lee; Ken Oowada; Hao Nguyen; Qui Nguyen; Nima Mokhlesi; Cynthia Hsu; Jason Li 001; Venky Ramachandra; Teruhiko Kamei; Masaaki Higashitani; Tuan Pham; et al. (ISSCC, 2012)

A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology. - Tz-Yi Liu; Tian Hong Yan; Roy Scheuerlein; Yingchang Chen; Jeffrey KoonYee Lee; Gopinath Balakrishnan; Gordon Yee; Henry Zhang; Alex Yap; Jingwen Ouyang; Takahiko Sasaki; Sravanti Addepalli; et al. (ISSCC, 2013)

Assessing the effect of electronic health information exchange on the completeness and validity of data for measuring viral load testing turnaround time in Nigeria. - Chinedu Aniekwe; Kendra Cuffe; Israel Audu; Nannim Nalda; Bright Ibezim; Michael Nnakwe; ThankGod Anazodo; Mubarak Dada; Erin Rottinghaus Romano; McPaul Okoye; Monte Martin; Ritu Shrivastava (Int. J. Medical Informatics, 2023)