Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size. - Robert S. Howell; Randall Lewis; H. George Henry; Harold Hearne; Deas Brown; Dale Dawson; Andris Ezis (Microelectron. Reliab., 2014)

Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance. - Ken A. Nagamatsu; Shamima Afroz; Shalini Gupta; Sam Wanis; Jeffrey Hartman; Eric J. Stewart; Patrick Shea; Karen Renaldo; Robert S. Howell; Brian Novak; Annaliese Drechsler; Josephine Chang; et al. (BCICTS, 2019)

SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch. - Sourabh Khandelwal; Brian Novak; Jordan Merkel; Ken A. Nagamatsu; Justin Parke; Mark Yu; Patrick Shea; Robert S. Howell (BCICTS, 2020)

Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling. - Shamima Afroz; Timothy Vasen; Brian Novak; Ken A. Nagamatsu; Patrick Shea; Sam Wanis; Robert S. Howell; Josephine Chang (BCICTS, 2021)

Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs. - Jerome T. Mlack; Nick Edwards; Brian Novak; Annaliese Drechsler; Jordan Merkel; Timothy Vasen; Daniel J. Hannan; Paul Brabant; Ishan Wathuthanthri; Justin Parke; Sam Wanis; Robert S. Howell; et al. (BCICTS, 2021)

SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process. - Timothy Vasen; Brian Novak; Marc Scimonelli; Kevin Frey; Mustapha Saad; Abbey Saia; Benjamin Grisafe; Ken A. Nagamatsu; Josephine Chang; Virginia Wheeler; Karl D. Hobart; Andrew D. Koehler; et al. (BCICTS, 2022)

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. - Akhil S. Kumar; Michael J. Uren; Matthew D. Smith 003; Martin Kuball; Justin Parke; H. George Henry; Robert S. Howell (IRPS, 2023)