Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes. - Francesco Giuseppe Della Corte; Fortunato Pezzimenti; Roberta Nipoti (Microelectron. J., 2007)

Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour. - Fortunato Pezzimenti; Francesco Giuseppe Della Corte; Roberta Nipoti (Microelectron. J., 2008)

Investigating Mesa Structure Impact on C-V Measurements. - Giovanna Sozzi; Giovanni Chiorboli; Lorenzo Perini; Roberta Nipoti (IEEE Access, 2024)

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law. - Giovanna Sozzi; Sergio Sapienza; Giovanni Chiorboli; Lasse Vines; Anders Hallén; Roberta Nipoti (IEEE Access, 2024)