Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. - Tommaso Stecconi; Youri Popoff; Roberto Guido; Mattia Halter; Donato Francesco Falcone; Antonio La Porta; Folkert Horst; Laura Bégon-Lours; Marilyne Sousa; Bert J. Offrein; Valeria Bragaglia (DRC, 2022)

Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM. - Tommaso Stecconi; Youri Popoff; Roberto Guido; Donato Francesco Falcone; Mattia Halter; Marilyne Sousa; Folkert Horst; Antonio La Porta; Bert J. Offrein; Valeria Bragaglia (ESSDERC, 2022)