Physically based models of electromigration: From Black's equation to modern TCAD models. - R. L. de Orio; Hajdin Ceric; Siegfried Selberherr (Microelectron. Reliab., 2010)

A compact model for early electromigration failures of copper dual-damascene interconnects. - R. L. de Orio; Hajdin Ceric; Siegfried Selberherr (Microelectron. Reliab., 2011)

An analytical approach for physical modeling of hot-carrier induced degradation. - Stanislav Tyaginov; Ivan A. Starkov; Hubert Enichlmair; C. Jungemann; Jong Mun Park; Ehrenfried Seebacher; R. L. de Orio; Hajdin Ceric; Tibor Grasser (Microelectron. Reliab., 2011)

Interconnect reliability dependence on fast diffusivity paths. - Hajdin Ceric; Roberto Lacerda de Orio; Siegfried Selberherr (Microelectron. Reliab., 2012)

Electromigration failure in a copper dual-damascene structure with a through silicon via. - Roberto Lacerda de Orio; Hajdin Ceric; Siegfried Selberherr (Microelectron. Reliab., 2012)

Study of the impact of electromigration on integrated circuit performance and reliability at design level. - Rafael O. Nunes; R. L. de Orio (Microelectron. Reliab., 2017)

Operational Amplifier Performance Degradation and Time-to-Failure due to Electromigration. - Rafael O. Nunes; R. L. de Orio (SBCCI, 2018)

Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. - Roberto Lacerda de Orio; Alexander Makarov; Siegfried Selberherr; Wolfgang Goes; Johannes Ender; Simone Fiorentini; Viktor Sverdlov (ESSDERC, 2019)

Finite Element Method Approach to MRAM Modeling. - Mario Bendra; Johannes Ender; Simone Fiorentini; T. Hadámek; Roberto Lacerda de Orio; Wolfgang Goes; Viktor Sverdlov; Siegfried Selberherr (MIPRO, 2021)

Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics. - Hajdin Ceric; Roberto Lacerda de Orio; Siegfried Selberherr (ESSDERC, 2022)

Spin Torques in ULTRA-Scaled MRAM Devices. - Simone Fiorentini; Mario Bendra; Johannes Ender; Roberto Lacerda de Orio; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov (ESSDERC, 2022)

Spin Transfer Torques in Ultra-Scaled MRAM Cells. - Mario Bendra; Simone Fiorentini; Johannes Ender; R. L. de Orio; T. Hadámek; W. J. Loch; Nils Petter Jørstad; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2022)

Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. - Johannes Ender; Roberto Lacerda de Orio; Wolfgang Gös; Viktor Sverdlov (LSSC, 2023)

Back-Hopping in Ultra-Scaled MRAM Cells. - Mario Bendra; Simone Fiorentini; Johannes Ender; R. L. de Orio; T. Hadámek; Nils Petter Jørstad; Bernhard Pruckner; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2023)

Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. - Mario Bendra; Bernhard Pruckner; R. L. de Orio; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (DRC, 2024)

LC-VCO with 1.6 GHz Tuning Range and Switched Cross-Coupled Core for Power Optimizing. - Raphael R. N. Souza; Agord M. Pinto; Roberto Lacerda de Orio; Leandro Tiago Manêra; Eduardo R. de Lima (DTTIS, 2024)

A 1.7 GHz Tuning Range LC-VCO with Varactors Array and Switched Cross-Coupled Core. - Raphael R. N. Souza; Agord M. Pinto; Roberto Lacerda de Orio; Leandro Tiago Manêra; Eduardo Rodrigues de Lima (ISVLSI, 2024)

A 2.0 GHz LC- VCO with 1.4 GHz Tuning Range and Switched Varactor Array. - Raphael R. N. Souza; Agord M. Pinto; Roberto Lacerda de Orio; Leandro Tiago Manêra; Eduardo Rodrigues de Lima (LASCAS, 2024)

Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. - Mario Bendra; R. L. de Orio; Siegfried Selberherr; Wolfgang Goes; Viktor Sverdlov (MIPRO, 2024)