SiCILIA - Silicon Carbide Detectors for Intense Luminosity Investigations and Applications. - Salvatore Tudisco; Francesco La Via; Clementina Agodi; Carmen Altana; Giacomo Borghi; Maurizio Boscardin; Giancarlo Bussolino; Lucia Calcagno; Massimo Camarda; Francesco Cappuzzello; Diana Carbone; Salvatore Cascino; et al. (Sensors, 2018)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. - Camille Leurquin; William Vandendaele; Aby-Gaël Viey; Romain Gwoziecki; René Escoffier; R. Salot; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2022)

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. - Camille Leurquin; William Vandendaele; Romain Gwoziecki; B. Mohamad; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2023)