Cost-effective cleaning and high-quality thin gate oxides. - Marc M. Heyns; Twan Bearda; Ingrid Cornelissen; Stefan De Gendt; Robin Degraeve; Guido Groeseneken; Conny Kenens; D. Martin Knotter; Lee M. Loewenstein; Paul W. Mertens; Sofie Mertens; Marc Meuris; et al. (IBM J. Res. Dev., 1999)

High-resolution SILC measurements of thin SiO2 at ultra low voltages. - Stefano Aresu; Ward De Ceuninck; R. Dreesen; Kris Croes; E. Andries; Jean Manca; Luc De Schepper; Robin Degraeve; Ben Kaczer; Marc D'Olieslaeger (Microelectron. Reliab., 2002)

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. - Ben Kaczer; Robin Degraeve; Mahmoud Rasras; An De Keersgieter; K. Van de Mieroop; Guido Groeseneken (Microelectron. Reliab., 2002)

A new method for the analysis of high-resolution SILC data. - Stefano Aresu; Ward De Ceuninck; G. Knuyt; J. Mertens; Jean Manca; Luc De Schepper; Robin Degraeve; Ben Kaczer; Marc D'Olieslaeger; Jan D'Haen (Microelectron. Reliab., 2003)

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. - Robert O'Connor; Greg Hughes; Robin Degraeve; Ben Kaczer (Microelectron. Reliab., 2005)

On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. - J. Pétry; Wilfried Vandervorst; Luigi Pantisano; Robin Degraeve (Microelectron. Reliab., 2005)

Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. - Steven Thijs; M. Natarajan Iyer; Dimitri Linten; Wutthinan Jeamsaksiri; T. Daenen; Robin Degraeve; Andries J. Scholten; Stefaan Decoutere; Guido Groeseneken (Microelectron. Reliab., 2006)

Distribution and generation of traps in SiO2/Al2O3 gate stacks. - Isodiana Crupi; Robin Degraeve; Bogdan Govoreanu; David P. Brunco; Philippe Roussel; Jan Van Houdt (Microelectron. Reliab., 2007)

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. - Ben Kaczer; Robin Degraeve; Philippe Roussel; Guido Groeseneken (Microelectron. Reliab., 2007)

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability. - Baojun Tang; Kris Croes; Yohan Barbarin; Yunqi Wang; Robin Degraeve; Yunlong Li; Maria Toledano-Luque; Thomas Kauerauf; Jürgen Bömmels; Zsolt Tökei; Ingrid De Wolf (Microelectron. Reliab., 2014)

Engineering of a TiN Al2O3 (Hf, Al)O2 Ta2O5 Hf RRAM cell for fast operation at low current. - C. Y. Chen; Ludovic Goux; Andrea Fantini; Robin Degraeve; Augusto Redolfi; Guido Groeseneken; Malgorzata Jurczak (ESSDERC, 2015)

The defect-centric perspective of device and circuit reliability - From individual defects to circuits. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Erik Bury; Moonju Cho; Robin Degraeve; Dimitri Linten; Guido Groeseneken; Halil Kukner; Praveen Raghavan; Francky Catthoor; et al. (ESSDERC, 2015)

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; Dimitri Linten; Ingrid Verbauwhede (A-SSCC, 2018)

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. - Simon Van Beek; Philippe Roussel; Barry J. O'Sullivan; Robin Degraeve; Stefan Cosemans; Dimitri Linten; Gouri Sankar Kar (ESSDERC, 2018)

Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications. - Jonas Doevenspeck; Robin Degraeve; Stefan Cosemans; Philippe Roussel; Bram-Ernst Verhoef; Rudy Lauwereins; Wim Dehaene (ESSDERC, 2018)

Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate. - Ana Lebanov; Andrea Fantini; Robin Degraeve; Manoj Nag; Myriam Willegems; Steve Smout; Soeren Steudel; Jan Genoe; Paul Heremans; Kris Myny (ESSDERC, 2018)

A multi-bit/cell PUF using analog breakdown positions in CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; T. Kallstenius; Guido Groeseneken; Dimitri Linten; Ingrid Verbauwhede (IRPS, 2018)

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. - Karine Florent; A. Subirats; Simone Lavizzari; Robin Degraeve; Umberto Celano; Ben Kaczer; Luca Di Piazza; Mihaela Ioana Popovici; Guido Groeseneken; Jan Van Houdt (IRPS, 2018)

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. - Kai-Hsin Chuang; Robin Degraeve; Andrea Fantini; Guido Groeseneken; Dimitri Linten; Ingrid Verbauwhede (IACR Trans. Cryptogr. Hardw. Embed. Syst., 2018)

Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications. - Jonas Doevenspeck; Robin Degraeve; Andrea Fantini; Peter Debacker; Diederik Verkest; Rudy Lauwereins; Wim Dehaene (IRPS, 2019)

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; Dimitri Linten; Ingrid Verbauwhede (IEEE J. Solid State Circuits, 2019)

Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. - Taras Ravsher; Shamin H. Sharifi; Andrea Fantini; Hubert Hody; Thomas Witters; Daniele Garbin; Robin Degraeve; Valeri Afanas'ev; Jan Van Houdt; Ludovic Goux; D. Crotti; Gouri Sankar Kar (IMW, 2021)

Modeling and spectroscopy of ovonic threshold switching defects. - Robin Degraeve; Taras Ravsher; Shoichi Kabuyanagi; Andrea Fantini; Sergiu Clima; Daniele Garbin; Gouri Sankar Kar (IRPS, 2021)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Erik Bury; Michiel Vandemaele; Ben Kaczer; Robin Degraeve (IRPS, 2022)

Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. - Kookjin Lee; Ben Kaczer; Anastasiia Kruv; Mario Gonzalez; Geert Eneman; Oguzhan O. Okudur; Alexander Grill; Jacopo Franco; Andrea Vici; Robin Degraeve; Ingrid De Wolf (IRPS, 2022)

Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks. - Andrea Vici; Robin Degraeve; João Pedro Bastos; Philippe Roussel; Ingrid De Wolf (IRPS, 2022)

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. - Md Nur K. Alam; Yusuke Higashi; Brecht Truijen; Ben Kaczer; Mihaela Ioana Popovici; Bj O'Sullivan; Philippe Roussel; Robin Degraeve; Marc M. Heyns; Jan Van Houdt (VLSI Technology and Circuits, 2022)

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. - Taras Ravsher; Daniele Garbin; Andrea Fantini; Robin Degraeve; Sergiu Clima; Gabriele Luca Donadio; Shreya Kundu; Hubert Hody; Wouter Devulder; Jan Van Houdt; Valeri Afanas'ev; Romain Delhougne; et al. (VLSI Technology and Circuits, 2022)

Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. - Javier Diaz-Fortuny; Dishant Sangani; Pablo Saraza-Canflanca; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2023)

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. - Pablo Saraza-Canflanca; Javier Diaz-Fortuny; Andrea Vici; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2023)

Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. - Andrea Vici; Robin Degraeve; Philippe J. Roussel; Jacopo Franco; Ben Kaczer; Ingrid De Wolf (IRPS, 2023)

Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits. - David Coenen; Herman Oprins; Robin Degraeve; Ingrid De Wolf (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2023)

Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. - Yuanyang Guo; Robin Degraeve; Philippe Roussel; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (ICANN (10), 2024)

Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Alex Romano-Molar; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2024)

Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. - Y. Guo; Robin Degraeve; Michiel Vandemaele; Pablo Saraza-Canflanca; Jacopo Franco; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2024)

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. - Taras Ravsher; Robin Degraeve; Daniele Garbin; Sergiu Clima; Andrea Fantini; Gabriele Luca Donadio; Shreya Kundu; Wouter Devulder; Hubert Hody; Goedele Potoms; Jan Van Houdt; Valeri Afanas'ev; et al. (IRPS, 2024)

Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. - Anirudh Varanasi; Robin Degraeve; Philippe J. Roussel; Andrea Vici; Clement Merckling (IRPS, 2024)

SILC and TDDB reliability of novel low thermal budget RMG gate stacks. - Andrea Vici; Robin Degraeve; Naoto Horiguchi; Ingrid De Wolf; Jacopo Franco (IRPS, 2024)

Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM. - Javier Diaz-Fortuny; Mahdi Benkhelifa; Alexander Grill; Erik Bury; Robin Degraeve; Ben Kaczer; Hussam Amrouch (IRPS, 2025)

Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir Computing. - Yuanyang Guo; Robin Degraeve; Pablo Saraza-Canflanca; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)

TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. - G. Molinaro; Hiroaki Arimura; S. Sacchi; Andrea Vici; Robin Degraeve; Ben Kaczer; Naoto Horiguchi; M. Houssa; Jacopo Franco (IRPS, 2025)

Algorithm for Robust Correction of Long-Term Drift Components in Gate Leakage Current RTN Data. - Anirudh Varanasi; Robin Degraeve; Philippe J. Roussel; Clement Merckling (IRPS, 2025)

RTNinja: a generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices. - Anirudh Varanasi; Robin Degraeve; Philippe Roussel; Clement Merckling (CoRR, 2025)